IRF632

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Voltage (Vdss) :

200 V

Rds On (Max) @ Id, Vgs :

600mOhm @ 5A, 10V

Product Status :

Active

Package :

Bulk

FET Feature :

-

Power Dissipation (Max) :

75W (Tc)

Mounting Type :

Through Hole

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

8A (Tc)

Package / Case :

TO-220-3

Input Capacitance (Ciss) (Max) @ Vds :

600 pF @ 25 V

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Series :

-

Gate Charge (Qg) (Max) @ Vgs :

30 nC @ 10 V

Supplier Device Package :

TO-220AB

Operating Temperature :

-55°C ~ 150°C (TJ)