IRF630STRRPBF
- Mfr.Part #
- IRF630STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A D2PAK
- Stock
- 1,656
- In Stock :
- 1,656
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 10.67mm
- Power Dissipation :
- 3W
- Number of Pins :
- 3
- Input Capacitance :
- 800pF
- Rds On Max :
- 400 mΩ
- Number of Elements :
- 1
- Power Dissipation-Max :
- 3W Ta 74W Tc
- Fall Time (Typ) :
- 20 ns
- Vgs (Max) :
- ±20V
- Min Operating Temperature :
- -55°C
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 200V
- Mount :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Published :
- 2016
- Turn On Delay Time :
- 9.4 ns
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 5.4A, 10V
- Gate to Source Voltage (Vgs) :
- 20V
- Turn-Off Delay Time :
- 39 ns
- Drain to Source Resistance :
- 400mOhm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 200V
- Width :
- 9.65mm
- Factory Lead Time :
- 8 Weeks
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- Number of Channels :
- 1
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Weight :
- 1.437803g
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Continuous Drain Current (ID) :
- 9A
- Height :
- 4.83mm
- Rise Time :
- 28ns
- Supplier Device Package :
- D2PAK (TO-263)
- Max Operating Temperature :
- 150°C
- Radiation Hardening :
- No
- Datasheets
- IRF630STRRPBF
N-Channel Tape & Reel (TR) 400mOhm @ 5.4A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF630STRRPBF Overview
The maximum input capacitance of this device is 800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 400mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF630STRRPBF Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRF630STRRPBF Applications
There are a lot of Vishay Siliconix
IRF630STRRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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