IRF630SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

3W Ta 74W Tc

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tube

Drain to Source Resistance :

400mOhm

Max Operating Temperature :

150°C

Threshold Voltage :

4V

Resistance :

400mOhm

Number of Channels :

1

Nominal Vgs :

4 V

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

200V

Weight :

1.437803g

Drive Voltage (Max Rds On,Min Rds On) :

10V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Input Capacitance :

800pF

Radiation Hardening :

No

Vgs (Max) :

±20V

Rise Time :

28ns

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Published :

2016

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Pins :

3

Rds On Max :

400 mΩ

Number of Elements :

1

Turn-Off Delay Time :

39 ns

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Factory Lead Time :

8 Weeks

Mounting Type :

Surface Mount

Fall Time (Typ) :

20 ns

Min Operating Temperature :

-55°C

Mount :

Surface Mount

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Rds On (Max) @ Id, Vgs :

400mOhm @ 5.4A, 10V

Supplier Device Package :

D2PAK (TO-263)

Height :

4.83mm

Continuous Drain Current (ID) :

9A

Length :

10.67mm

REACH SVHC :

Unknown

Width :

9.65mm

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3W

Turn On Delay Time :

9.4 ns

FET Type :

N-Channel