IRF630S

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Mfr.Part #
IRF630S
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 9A D2PAK
Stock
50,652
In Stock :
50,652

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Current Rating :
6.5A
Gate to Source Voltage (Vgs) :
20V
Input Capacitance :
800pF
Vgs(th) (Max) @ Id :
4V @ 250µA
RoHS Status :
Non-RoHS Compliant
Rds On Max :
400 mΩ
Power Dissipation-Max :
3W Ta 74W Tc
Gate Charge (Qg) (Max) @ Vgs :
43nC @ 10V
Packaging :
Tube
Drain to Source Breakdown Voltage :
200V
Supplier Device Package :
D2PAK (TO-263)
Weight :
1.437803g
Mount :
Surface Mount
Turn On Delay Time :
9.4 ns
Length :
10.67mm
Drive Voltage (Max Rds On,Min Rds On) :
10V
Turn-Off Delay Time :
39 ns
Min Operating Temperature :
-55°C
Height :
4.83mm
Input Capacitance (Ciss) (Max) @ Vds :
800pF @ 25V
Rise Time :
28ns
Max Operating Temperature :
150°C
Current - Continuous Drain (Id) @ 25°C :
9A Tc
Rds On (Max) @ Id, Vgs :
400mOhm @ 5.4A, 10V
Fall Time (Typ) :
20 ns
Voltage - Rated DC :
200V
Operating Temperature :
-55°C~150°C TJ
Lead Free :
Contains Lead
Vgs (Max) :
±20V
Width :
9.65mm
Drain to Source Voltage (Vdss) :
200V
Number of Pins :
3
Number of Channels :
1
Drain to Source Resistance :
400mOhm
FET Type :
N-Channel
Mounting Type :
Surface Mount
Continuous Drain Current (ID) :
9A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Element Configuration :
Single
Datasheets
IRF630S
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF630S from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, Number of Channels:1, Mounting Type:Surface Mount, IRF630S pinout, IRF630S datasheet PDF, IRF630S amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF630S ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF630S


N-Channel Tube 400mOhm @ 5.4A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF630S Overview


The maximum input capacitance of this device is 800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 400mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

IRF630S Features


a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)


IRF630S Applications


There are a lot of Vishay Siliconix
IRF630S applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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