IRF630S
- Mfr.Part #
- IRF630S
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 9A D2PAK
- Stock
- 50,652
- In Stock :
- 50,652
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Current Rating :
- 6.5A
- Gate to Source Voltage (Vgs) :
- 20V
- Input Capacitance :
- 800pF
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- Non-RoHS Compliant
- Rds On Max :
- 400 mΩ
- Power Dissipation-Max :
- 3W Ta 74W Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 43nC @ 10V
- Packaging :
- Tube
- Drain to Source Breakdown Voltage :
- 200V
- Supplier Device Package :
- D2PAK (TO-263)
- Weight :
- 1.437803g
- Mount :
- Surface Mount
- Turn On Delay Time :
- 9.4 ns
- Length :
- 10.67mm
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 39 ns
- Min Operating Temperature :
- -55°C
- Height :
- 4.83mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Rise Time :
- 28ns
- Max Operating Temperature :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 9A Tc
- Rds On (Max) @ Id, Vgs :
- 400mOhm @ 5.4A, 10V
- Fall Time (Typ) :
- 20 ns
- Voltage - Rated DC :
- 200V
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- Width :
- 9.65mm
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Pins :
- 3
- Number of Channels :
- 1
- Drain to Source Resistance :
- 400mOhm
- FET Type :
- N-Channel
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- 9A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Datasheets
- IRF630S
N-Channel Tube 400mOhm @ 5.4A, 10V ±20V 800pF @ 25V 43nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF630S Overview
The maximum input capacitance of this device is 800pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 9A.When VGS=200V, and ID flows to VDS at 200VVDS, the drain-source breakdown voltage is 200V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 39 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 400mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9.4 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF630S Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 39 ns
single MOSFETs transistor is 400mOhm
a 200V drain to source voltage (Vdss)
IRF630S Applications
There are a lot of Vishay Siliconix
IRF630S applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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