IRF630PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

9A

Drain to Source Resistance :

400mOhm

Number of Pins :

3

REACH SVHC :

Unknown

Mount :

Through Hole

Input Capacitance :

800pF

Gate Charge (Qg) (Max) @ Vgs :

43nC @ 10V

Rise Time :

28ns

Radiation Hardening :

No

Width :

4.7mm

Mounting Type :

Through Hole

Fall Time (Typ) :

20 ns

RoHS Status :

ROHS3 Compliant

Weight :

6.000006g

Length :

10.41mm

Supplier Device Package :

TO-220AB

FET Type :

N-Channel

Vgs (Max) :

±20V

Rds On Max :

400 mΩ

Drain to Source Voltage (Vdss) :

200V

Threshold Voltage :

4V

Published :

2006

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

400mOhm @ 5.4A, 10V

Turn On Delay Time :

9.4 ns

Height :

9.01mm

Operating Temperature :

-55°C~150°C TJ

Resistance :

400mOhm

Max Operating Temperature :

150°C

Power Dissipation :

74W

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

39 ns

Package / Case :

TO-220-3

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

8 Weeks

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Min Operating Temperature :

-55°C

Power Dissipation-Max :

74W Tc

Number of Channels :

1