IRF630NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Voltage - Rated DC :

200V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Width :

9.65mm

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

200V

Series :

HEXFET®

Turn-Off Delay Time :

27 ns

Length :

10.668mm

Case Connection :

DRAIN

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

12 Weeks

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

FET Type :

N-Channel

REACH SVHC :

No SVHC

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Transistor Element Material :

SILICON

Published :

2010

Power Dissipation :

82W

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

9.3A

Transistor Application :

SWITCHING

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

94 mJ

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

9.3A

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Resistance :

300mOhm

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Lead Free :

Contains Lead, Lead Free

Height :

4.826mm

Turn On Delay Time :

7.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

2

Radiation Hardening :

No

Nominal Vgs :

4 V

Rds On (Max) @ Id, Vgs :

300m Ω @ 5.4A, 10V

Peak Reflow Temperature (Cel) :

260

Power Dissipation-Max :

82W Tc

Mount :

Surface Mount

Mounting Type :

Surface Mount

Fall Time (Typ) :

15 ns

Terminal Form :

Gull wing

Rise Time :

14ns

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1