IRF630NS

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Pulsed Drain Current-Max (IDM) :

37A

Surface Mount :

yes

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.3Ohm

Terminal Form :

Gull wing

FET Type :

N-Channel

Packaging :

Tube

Qualification Status :

Not Qualified

RoHS Status :

Non-RoHS Compliant

Drive Voltage (Max Rds On,Min Rds On) :

10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Element Material :

SILICON

Series :

HEXFET®

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA

Rds On (Max) @ Id, Vgs :

300m Ω @ 5.4A, 10V

DS Breakdown Voltage-Min :

200V

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Number of Elements :

1

Published :

2004

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Number of Terminations :

2

Power Dissipation-Max :

82W Tc

Terminal Position :

Single

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

9.3A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Peak Reflow Temperature (Cel) :

225

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Avalanche Energy Rating (Eas) :

94 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Tin/Lead (Sn/Pb)

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Operating Temperature :

-55°C~175°C TJ

JESD-609 Code :

e0

Time@Peak Reflow Temperature-Max (s) :

30