IRF630NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Time@Peak Reflow Temperature-Max (s) :

30

Mount :

Through Hole

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Packaging :

Tube

Element Configuration :

Single

Published :

2004

Series :

HEXFET®

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Drain to Source Breakdown Voltage :

200V

Nominal Vgs :

4 V

Fall Time (Typ) :

15 ns

Voltage - Rated DC :

200V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

300m Ω @ 5.4A, 10V

Threshold Voltage :

4V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Finish :

MATTE TIN OVER NICKEL

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Width :

4.69mm

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Current Rating :

9.3A

Avalanche Energy Rating (Eas) :

94 mJ

Factory Lead Time :

12 Weeks

Mounting Type :

Through Hole

Number of Terminations :

3

Continuous Drain Current (ID) :

9.3A

Height :

8.77mm

Peak Reflow Temperature (Cel) :

250

Length :

10.54mm

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Package / Case :

TO-220-3

Lead Free :

Contains Lead, Lead Free

Recovery Time :

176 ns

Rise Time :

14ns

Power Dissipation :

82W

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Number of Elements :

1

Turn-Off Delay Time :

27 ns

Termination :

Through Hole

JEDEC-95 Code :

TO-220AB

Turn On Delay Time :

7.9 ns

Power Dissipation-Max :

82W Tc

Resistance :

300mOhm

Dual Supply Voltage :

200V

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN