IRF630NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Radiation Hardening :

No

Power Dissipation :

82W

Series :

HEXFET®

Rds On (Max) @ Id, Vgs :

300mOhm @ 5.4A, 10V

Published :

2004

Vgs (Max) :

±20V

Width :

4.826mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Turn-Off Delay Time :

27 ns

Drain to Source Breakdown Voltage :

200V

Resistance :

300mOhm

Number of Pins :

3

Rds On Max :

300 mΩ

Height :

9.65mm

Mount :

Through Hole

Supplier Device Package :

TO-262

Number of Elements :

1

Fall Time (Typ) :

15 ns

Input Capacitance (Ciss) (Max) @ Vds :

575pF @ 25V

Max Operating Temperature :

175°C

Current - Continuous Drain (Id) @ 25°C :

9.3A Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

200V

Voltage - Rated DC :

200V

Input Capacitance :

575pF

Min Operating Temperature :

-55°C

Packaging :

Tube

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

9.5A

RoHS Status :

RoHS Compliant

Drain to Source Resistance :

300mOhm

FET Type :

N-Channel

Rise Time :

14ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 10V

Current Rating :

9A

Turn On Delay Time :

7.9 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.668mm

Lead Free :

Lead Free

Power Dissipation-Max :

82W Tc

Operating Temperature :

-55°C~175°C TJ