IRF630FP

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

20V

Turn On Delay Time :

10 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Pbfree Code :

yes

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

Drain Current-Max (Abs) (ID) :

9A

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Base Part Number :

IRF6

Power Dissipation-Max :

30W Tc

Operating Temperature :

-65°C~150°C TJ

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Mounting Type :

Through Hole

Package / Case :

TO-220-3 Full Pack

Pin Count :

3

Rise Time :

15ns

Vgs (Max) :

±20V

ECCN Code :

EAR99

Number of Elements :

1

Series :

MESH OVERLAY™ II

Drain-source On Resistance-Max :

0.4Ohm

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Mount :

Through Hole

Drain to Source Breakdown Voltage :

200V

Number of Terminations :

3

Power Dissipation :

30W

Number of Pins :

3

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

Isolated

Transistor Element Material :

SILICON

Terminal Finish :

Matte Tin (Sn) - annealed

Continuous Drain Current (ID) :

9A

Current - Continuous Drain (Id) @ 25°C :

9A Tc