IRF630

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Pitch :

2.54mm

Length :

10.4mm

Threshold Voltage :

3V

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Nominal Vgs :

3 V

Resistance :

400mOhm

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Power Dissipation :

75W

Transistor Element Material :

SILICON

Series :

MESH OVERLAY™ II

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Weight :

4.535924g

Continuous Drain Current (ID) :

9A

Turn On Delay Time :

10 ns

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

ECCN Code :

EAR99

Voltage - Rated DC :

200V

Current Rating :

9A

Base Part Number :

IRF6

REACH SVHC :

No SVHC

Height :

15.75mm

Package / Case :

TO-220-3

Rise Time :

15ns

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Factory Lead Time :

12 Weeks

Dual Supply Voltage :

200V

Mount :

Through Hole

Element Configuration :

Single

Width :

4.6mm

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Additional Feature :

AVALANCHE RATED

Power Dissipation-Max :

75W Tc

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

200V

Feedback Cap-Max (Crss) :

50 pF

Number of Pins :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Drain Current-Max (Abs) (ID) :

9A

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Packaging :

Tube

Reverse Recovery Time :

170 ns

Operating Mode :

ENHANCEMENT MODE

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-65°C~150°C TJ

Radiation Hardening :

No