IRF630

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Turn On Delay Time :

10 ns

Base Part Number :

IRF6

Vgs (Max) :

±20V

Height :

15.75mm

Drain Current-Max (Abs) (ID) :

9A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Number of Terminations :

3

Feedback Cap-Max (Crss) :

50 pF

Series :

MESH OVERLAY™ II

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

Threshold Voltage :

3V

Rise Time :

15ns

Power Dissipation :

75W

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Packaging :

Tube

Radiation Hardening :

No

Lead Free :

Lead Free

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Gate Charge (Qg) (Max) @ Vgs :

45nC @ 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

9A

Factory Lead Time :

12 Weeks

Reverse Recovery Time :

170 ns

FET Type :

N-Channel

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

200V

Pin Count :

3

Power Dissipation-Max :

75W Tc

Transistor Element Material :

SILICON

Length :

10.4mm

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Nominal Vgs :

3 V

Resistance :

400mOhm

Rds On (Max) @ Id, Vgs :

400m Ω @ 4.5A, 10V

Width :

4.6mm

Mount :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

700pF @ 25V

Operating Temperature :

-65°C~150°C TJ

Terminal Finish :

Matte Tin (Sn)

Current Rating :

9A

Lead Pitch :

2.54mm

Element Configuration :

Single

Weight :

4.535924g

Voltage - Rated DC :

200V

Package / Case :

TO-220-3

Number of Pins :

3

Dual Supply Voltage :

200V

Vgs(th) (Max) @ Id :

4V @ 250µA