IRF624PBF
- Mfr.Part #
- IRF624PBF
- Manufacturer
- Vishay
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 250V 4.4A TO220AB
- Stock
- 2,923
- In Stock :
- 2,923
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 4.4A
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 20 ns
- Power Dissipation :
- 50W
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 4.4A
- Resistance :
- 1.1Ohm
- Width :
- 4.7mm
- Published :
- 2008
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 3
- Voltage - Rated DC :
- 250V
- REACH SVHC :
- Unknown
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Power Dissipation-Max :
- 50W Tc
- Input Capacitance :
- 260pF
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 1.1Ohm @ 2.6A, 10V
- Weight :
- 6.000006g
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Mount :
- Through Hole
- Vgs (Max) :
- ±20V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Resistance :
- 1.1Ohm
- Package / Case :
- TO-220-3
- Rds On Max :
- 1.1 Ω
- Supplier Device Package :
- TO-220AB
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Packaging :
- Tube
- Rise Time :
- 13ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Length :
- 10.41mm
- Drain to Source Breakdown Voltage :
- 250V
- Min Operating Temperature :
- -55°C
- Fall Time (Typ) :
- 12 ns
- Turn On Delay Time :
- 7 ns
- Height :
- 9.01mm
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 250V
- Number of Channels :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 4.4A Tc
- Factory Lead Time :
- 8 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Datasheets
- IRF624PBF
N-Channel Tube 1.1Ohm @ 2.6A, 10V ±20V 260pF @ 25V 14nC @ 10V 250V TO-220-3
IRF624PBF Overview
A device's maximal input capacitance is 260pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 4.4A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 250V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.1Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 250V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF624PBF Features
a continuous drain current (ID) of 4.4A
a drain-to-source breakdown voltage of 250V voltage
the turn-off delay time is 20 ns
single MOSFETs transistor is 1.1Ohm
a 250V drain to source voltage (Vdss)
IRF624PBF Applications
There are a lot of Vishay Siliconix
IRF624PBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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