IRF621R

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Transistor Element Material :

SILICON

Surface Mount :

No

Product Status :

Active

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Feature :

-

Qualification Status :

COMMERCIAL

Pbfree Code :

No

Current - Continuous Drain (Id) @ 25°C :

5A (Tc)

Number of Terminals :

3

Polarity/Channel Type :

N-Channel

Power Dissipation (Max) :

40W (Tc)

Package Shape :

RECTANGULAR

DS Breakdown Voltage-Min :

150 V

Drain to Source Voltage (Vdss) :

150 V

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

800mOhm @ 2.5A, 10V

Terminal Form :

THROUGH-HOLE

Reach Compliance Code :

Unknown

Terminal Finish :

TIN LEAD

Package / Case :

TO-220-3

Terminal Position :

Single

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

JESD-609 Code :

e0

Drain-source On Resistance-Max :

0.8 Ω

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On, Min Rds On) :

10V

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

450 pF @ 25 V

Manufacturer :

Rochester Electronics LLC

Operating Temperature :

-55°C ~ 150°C (TJ)

Series :

-

Avalanche Energy Rating (Eas) :

85 mJ

FET Type :

N-Channel

Package :

Bulk

Pulsed Drain Current-Max (IDM) :

20 A

Vgs (Max) :

±20V