IRF6218STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Length :

10.668mm

RoHS Status :

ROHS3 Compliant

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Published :

2004

Transistor Element Material :

SILICON

FET Type :

P-Channel

Turn-Off Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

Mount :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

9.65mm

Vgs (Max) :

±20V

Packaging :

Tape and Reel (TR)

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Power Dissipation-Max :

250W Tc

Continuous Drain Current (ID) :

-150A

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

-150V

Nominal Vgs :

-5 V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

14 Weeks

Element Configuration :

Single

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Turn On Delay Time :

21 ns

Case Connection :

DRAIN

Number of Pins :

3

Radiation Hardening :

No

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Drain to Source Voltage (Vdss) :

150V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 250μA

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Threshold Voltage :

-5V

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

20V

Rise Time :

70ns

Terminal Form :

Gull wing

Lead Free :

Lead Free

Power Dissipation :

250W

Mounting Type :

Surface Mount

Height :

4.572mm

Drain Current-Max (Abs) (ID) :

27A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Fall Time (Typ) :

30 ns

Series :

HEXFET®