IRF6218SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

20V

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Form :

Gull wing

Vgs (Max) :

±20V

JESD-609 Code :

e3

Number of Pins :

3

Turn On Delay Time :

21 ns

Peak Reflow Temperature (Cel) :

260

Max Operating Temperature :

175°C

Vgs(th) (Max) @ Id :

5V @ 250μA

Turn-Off Delay Time :

35 ns

FET Type :

P-Channel

Drain to Source Voltage (Vdss) :

150V

Rise Time :

70ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Radiation Hardening :

No

Terminal Position :

Single

Packaging :

Tube

Number of Terminations :

2

Configuration :

SINGLE WITH BUILT-IN DIODE

Fall Time (Typ) :

30 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Published :

2004

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Min Operating Temperature :

-55°C

Drain Current-Max (Abs) (ID) :

27A

Continuous Drain Current (ID) :

-150A

Number of Elements :

1

Series :

HEXFET®

JESD-30 Code :

R-PSSO-G2

Power Dissipation-Max :

250W Tc

Power Dissipation :

250W

Transistor Application :

SWITCHING

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Rds On (Max) @ Id, Vgs :

150m Ω @ 16A, 10V

RoHS Status :

ROHS3 Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)