IRF6218PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Supplier Device Package :

TO-220AB

Height :

15.24mm

Rds On Max :

150 mΩ

Continuous Drain Current (ID) :

-27A

Dual Supply Voltage :

-150V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Gate to Source Voltage (Vgs) :

20V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Number of Pins :

3

Power Dissipation :

250W

Mount :

Through Hole

Published :

2003

Turn-Off Delay Time :

35 ns

Series :

HEXFET®

Input Capacitance :

2.21nF

REACH SVHC :

No SVHC

Mounting Type :

Through Hole

Turn On Delay Time :

21 ns

Drain to Source Resistance :

150mOhm

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rise Time :

70ns

Package / Case :

TO-220-3

Drain to Source Breakdown Voltage :

-150V

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Threshold Voltage :

-5V

Lead Free :

Lead Free

Voltage - Rated DC :

-150V

Vgs(th) (Max) @ Id :

5V @ 250μA

Current Rating :

-27A

Contact Plating :

Tin

Operating Temperature :

-55°C~175°C TJ

Nominal Vgs :

-5 V

Rds On (Max) @ Id, Vgs :

150mOhm @ 16A, 10V

Number of Elements :

1

Drain to Source Voltage (Vdss) :

150V

RoHS Status :

ROHS3 Compliant

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Fall Time (Typ) :

30 ns

Width :

4.69mm

FET Type :

P-Channel

Power Dissipation-Max :

250W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Length :

10.5156mm