IRF6218PBF
- Mfr.Part #
- IRF6218PBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- AUTOMOTIVE HEXFET P-CHANNEL
- Stock
- 11,739
- In Stock :
- 11,739
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drain to Source Breakdown Voltage :
- -150V
- Mount :
- Through Hole
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Threshold Voltage :
- -5V
- Radiation Hardening :
- No
- Fall Time (Typ) :
- 30 ns
- Published :
- 2003
- Continuous Drain Current (ID) :
- -27A
- Rise Time :
- 70ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 150mOhm @ 16A, 10V
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Current Rating :
- -27A
- Turn-Off Delay Time :
- 35 ns
- Dual Supply Voltage :
- -150V
- Min Operating Temperature :
- -55°C
- Number of Pins :
- 3
- Factory Lead Time :
- 14 Weeks
- Input Capacitance (Ciss) (Max) @ Vds :
- 2210pF @ 25V
- Length :
- 10.5156mm
- Max Operating Temperature :
- 175°C
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation :
- 250W
- Voltage - Rated DC :
- -150V
- Vgs (Max) :
- ±20V
- Width :
- 4.69mm
- Current - Continuous Drain (Id) @ 25°C :
- 27A Tc
- Input Capacitance :
- 2.21nF
- FET Type :
- P-Channel
- Number of Elements :
- 1
- Drain to Source Voltage (Vdss) :
- 150V
- Operating Temperature :
- -55°C~175°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 110nC @ 10V
- Series :
- HEXFET®
- Mounting Type :
- Through Hole
- Turn On Delay Time :
- 21 ns
- Height :
- 15.24mm
- Drain to Source Resistance :
- 150mOhm
- Supplier Device Package :
- TO-220AB
- Contact Plating :
- Tin
- Rds On Max :
- 150 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Nominal Vgs :
- -5 V
- Power Dissipation-Max :
- 250W Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- IRF6218PBF

P-Channel Tube 150mOhm @ 16A, 10V ±20V 2210pF @ 25V 110nC @ 10V 150V TO-220-3
IRF6218PBF Description
UniFETM MOSFET is Fairchild Semiconductor's high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX, and electronic lamp ballasts.
IRF6218PBF Features
Low Gate to Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
IRF6218PBF Applications
Reset Switch for Active Clamp ?¢
Reset DC-DC converters
Lead-Free
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