IRF6218PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

250W

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Rds On Max :

150 mΩ

FET Type :

P-Channel

Number of Pins :

3

Min Operating Temperature :

-55°C

Voltage - Rated DC :

-150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rds On (Max) @ Id, Vgs :

150mOhm @ 16A, 10V

Length :

10.5156mm

Nominal Vgs :

-5 V

Drain to Source Breakdown Voltage :

-150V

Element Configuration :

Single

Rise Time :

70ns

Height :

15.24mm

Factory Lead Time :

14 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

2210pF @ 25V

Continuous Drain Current (ID) :

-27A

RoHS Status :

ROHS3 Compliant

Fall Time (Typ) :

30 ns

Series :

HEXFET®

Published :

2003

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Drain to Source Resistance :

150mOhm

Dual Supply Voltage :

-150V

Lead Free :

Lead Free

Width :

4.69mm

Number of Elements :

1

Power Dissipation-Max :

250W Tc

Packaging :

Tube

Contact Plating :

Tin

Threshold Voltage :

-5V

Mounting Type :

Through Hole

Turn-Off Delay Time :

35 ns

Turn On Delay Time :

21 ns

Radiation Hardening :

No

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

110nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Drain to Source Voltage (Vdss) :

150V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance :

2.21nF

Current Rating :

-27A

Vgs (Max) :

±20V

Supplier Device Package :

TO-220AB

Vgs(th) (Max) @ Id :

5V @ 250μA

Max Operating Temperature :

175°C