IRF6217TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

8

FET Type :

P-Channel

Gate to Source Voltage (Vgs) :

20V

Factory Lead Time :

14 Weeks

Drain to Source Voltage (Vdss) :

150V

Fall Time (Typ) :

16 ns

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

0.7A

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-150V

Terminal Position :

Dual

Time@Peak Reflow Temperature-Max (s) :

30

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Vgs (Max) :

±20V

Turn On Delay Time :

12 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

5V @ 250μA

REACH SVHC :

No SVHC

Number of Terminations :

8

Radiation Hardening :

No

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Continuous Drain Current (ID) :

-700mA

Operating Temperature :

-55°C~150°C TJ

JESD-609 Code :

e3

Published :

2002

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Rise Time :

7.2ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

1.4986mm

Nominal Vgs :

20 V

Power Dissipation-Max :

2.5W Ta

Mount :

Surface Mount

Turn-Off Delay Time :

14 ns

ECCN Code :

EAR99

Power Dissipation :

2.5W

Width :

3.9878mm

Length :

4.9784mm

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 10V

Threshold Voltage :

-5V

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Rds On (Max) @ Id, Vgs :

2.4 Ω @ 420mA, 10V

Contact Plating :

Tin

Element Configuration :

Single