IRF6216TRPBF-1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Polarity/Channel Type :

P-Channel

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

240mOhm @ 1.3A, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

150 V

Package Shape :

RECTANGULAR

Supplier Device Package :

SOT-223

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-261-4, TO-261AA

Operating Temperature :

-55°C ~ 150°C (TJ)

Surface Mount :

yes

Gate Charge (Qg) (Max) @ Vgs :

49 nC @ 10 V

Number of Elements :

1

Terminal Position :

Dual

Series :

HEXFET®

Vgs (Max) :

±20V

Power Dissipation (Max) :

2.5W (Ta)

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

150 V

Technology :

MOSFET (Metal Oxide)

Package :

Tape and Reel (TR)

Terminal Form :

Gull wing

Manufacturer :

Infineon Technologies AG

FET Feature :

-

JESD-30 Code :

R-PDSO-G8

JEDEC-95 Code :

MS-012AA

Mounting Type :

Surface Mount

Drain-source On Resistance-Max :

0.24 Ω

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Element Material :

SILICON

Product Status :

Obsolete

Input Capacitance (Ciss) (Max) @ Vds :

1280 pF @ 25 V

FET Type :

P-Channel

Number of Terminals :

8

Current - Continuous Drain (Id) @ 25°C :

2.2A (Ta)

Peak Reflow Temperature (Cel) :

NOT SPECIFIED