IRF6215STRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Number of Terminations :

2

Surface Mount :

yes

Qualification Status :

Not Qualified

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.29Ohm

Published :

2005

Reach Compliance Code :

not_compliant

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PSSO-G2

Time@Peak Reflow Temperature-Max (s) :

30

Avalanche Energy Rating (Eas) :

310 mJ

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

260

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Drain to Source Voltage (Vdss) :

150V

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Pulsed Drain Current-Max (IDM) :

44A

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Drain Current-Max (Abs) (ID) :

13A

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±20V

Terminal Position :

Single

Series :

HEXFET®

Factory Lead Time :

16 Weeks

Power Dissipation-Max :

3.8W Ta 110W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Number of Elements :

1

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Terminal Form :

Gull wing