IRF6215STRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

-13A

Terminal Form :

Gull wing

Series :

HEXFET®

Number of Pins :

3

Drain to Source Breakdown Voltage :

-150V

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

P-Channel

Nominal Vgs :

-4 V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

Dual Supply Voltage :

150V

Threshold Voltage :

-4V

Mount :

Surface Mount

Number of Terminations :

2

REACH SVHC :

No SVHC

Element Configuration :

Single

Time@Peak Reflow Temperature-Max (s) :

30

Turn On Delay Time :

14 ns

Published :

1998

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Turn-Off Delay Time :

53 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Factory Lead Time :

12 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Current Rating :

-13A

Number of Elements :

1

Fall Time (Typ) :

37 ns

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Case Connection :

DRAIN

Power Dissipation :

110W

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

-150V

Width :

9.65mm

Radiation Hardening :

No

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

44A

Resistance :

290mOhm

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Power Dissipation-Max :

3.8W Ta 110W Tc

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Length :

10.668mm

Height :

4.826mm

Termination :

SMD/SMT

Mounting Type :

Surface Mount

Lead Free :

Contains Lead, Lead Free

Rise Time :

36ns