IRF6215S

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

JESD-609 Code :

e0

Number of Terminations :

2

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Power Dissipation-Max :

3.8W Ta 110W Tc

Pulsed Drain Current-Max (IDM) :

44A

Surface Mount :

yes

Avalanche Energy Rating (Eas) :

310 mJ

Operating Mode :

ENHANCEMENT MODE

Terminal Position :

Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Form :

Gull wing

ECCN Code :

EAR99

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Case Connection :

DRAIN

Published :

1998

DS Breakdown Voltage-Min :

150V

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

1

HTS Code :

8541.29.00.95

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

225

RoHS Status :

Non-RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drain to Source Voltage (Vdss) :

150V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Vgs (Max) :

±20V

FET Type :

P-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Mounting Type :

Surface Mount

Terminal Finish :

Tin/Lead (Sn/Pb)

Drain-source On Resistance-Max :

0.29Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

13A