IRF6215PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Termination :

Through Hole

Fall Time (Typ) :

37 ns

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Current Rating :

-13A

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

14 ns

Dual Supply Voltage :

-150V

Lead Pitch :

2.54mm

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Width :

4.69mm

Turn-Off Delay Time :

53 ns

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Published :

1998

Contact Plating :

Tin

Number of Terminations :

3

Series :

HEXFET®

Drain to Source Breakdown Voltage :

-150V

Rds On (Max) @ Id, Vgs :

290m Ω @ 6.6A, 10V

Gate to Source Voltage (Vgs) :

20V

Number of Pins :

3

Case Connection :

DRAIN

Mounting Type :

Through Hole

FET Type :

P-Channel

Factory Lead Time :

14 Weeks

Threshold Voltage :

-4V

Packaging :

Tube

Resistance :

290mOhm

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

44A

Radiation Hardening :

No

Power Dissipation :

110W

Nominal Vgs :

-4 V

Drain to Source Voltage (Vdss) :

150V

Lead Free :

Lead Free

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Recovery Time :

240 ns

Continuous Drain Current (ID) :

-13A

Length :

10.5156mm

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Voltage - Rated DC :

-150V

Operating Temperature :

-55°C~175°C TJ

Rise Time :

36ns

Vgs (Max) :

±20V

Number of Elements :

1

Height :

15.24mm

Power Dissipation-Max :

110W Tc