IRF6215LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

290mOhm @ 6.6A, 10V

REACH SVHC :

No SVHC

Packaging :

Tube

Number of Elements :

1

Mount :

Through Hole

Rds On Max :

290 mΩ

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

66nC @ 10V

Supplier Device Package :

TO-262

Width :

4.826mm

Height :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Operating Temperature :

175°C

Min Operating Temperature :

-55°C

Fall Time (Typ) :

37 ns

FET Type :

P-Channel

Input Capacitance (Ciss) (Max) @ Vds :

860pF @ 25V

Power Dissipation :

110W

Lead Free :

Lead Free

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Drain to Source Resistance :

290mOhm

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Turn-Off Delay Time :

53 ns

Power Dissipation-Max :

3.8W Ta 110W Tc

Turn On Delay Time :

14 ns

Vgs (Max) :

±20V

Drain to Source Breakdown Voltage :

-150V

Operating Temperature :

-55°C~175°C TJ

Continuous Drain Current (ID) :

-13A

RoHS Status :

RoHS Compliant

Number of Pins :

3

Threshold Voltage :

-4V

Input Capacitance :

860pF

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2005

Drain to Source Voltage (Vdss) :

150V

Current - Continuous Drain (Id) @ 25°C :

13A Tc

Length :

10.668mm

Rise Time :

36ns