IRF620STRL
- Mfr.Part #
- IRF620STRL
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 5.2A D2PAK
- Stock
- 3,629
- In Stock :
- 3,629
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Power Dissipation-Max :
- 3W Ta 50W Tc
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- Max Operating Temperature :
- 150°C
- Height :
- 4.83mm
- Current - Continuous Drain (Id) @ 25°C :
- 5.2A Tc
- Rds On Max :
- 800 mΩ
- Gate to Source Voltage (Vgs) :
- 20V
- Published :
- 2017
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- D2PAK
- Length :
- 10.67mm
- Number of Channels :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 260pF @ 25V
- Turn-Off Delay Time :
- 19 ns
- Drain to Source Resistance :
- 800mOhm
- RoHS Status :
- Non-RoHS Compliant
- Turn On Delay Time :
- 7.2 ns
- Drain to Source Voltage (Vdss) :
- 200V
- Input Capacitance :
- 260pF
- Fall Time (Typ) :
- 13 ns
- Rds On (Max) @ Id, Vgs :
- 800mOhm @ 3.1A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Continuous Drain Current (ID) :
- 5.2A
- Width :
- 9.65mm
- Weight :
- 1.437803g
- Vgs (Max) :
- ±20V
- Gate Charge (Qg) (Max) @ Vgs :
- 14nC @ 10V
- Min Operating Temperature :
- -55°C
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rise Time :
- 22ns
- Element Configuration :
- Single
- FET Type :
- N-Channel
- Datasheets
- IRF620STRL
N-Channel Tape & Reel (TR) 800mOhm @ 3.1A, 10V ±20V 260pF @ 25V 14nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF620STRL Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 260pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 5.2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 19 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 800mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 7.2 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRF620STRL Features
a continuous drain current (ID) of 5.2A
the turn-off delay time is 19 ns
single MOSFETs transistor is 800mOhm
a 200V drain to source voltage (Vdss)
IRF620STRL Applications
There are a lot of Vishay Siliconix
IRF620STRL applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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