IRF620SPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

Power Dissipation-Max :

3W Ta 50W Tc

Height :

4.83mm

Factory Lead Time :

8 Weeks

RoHS Status :

ROHS3 Compliant

Dual Supply Voltage :

200V

Continuous Drain Current (ID) :

5.2A

Element Configuration :

Single

Lead Free :

Lead Free

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Turn On Delay Time :

7.2 ns

Radiation Hardening :

No

Min Operating Temperature :

-55°C

Fall Time (Typ) :

13 ns

Rise Time :

22ns

Published :

2015

Length :

10.67mm

Supplier Device Package :

D2PAK

Rds On (Max) @ Id, Vgs :

800mOhm @ 3.1A, 10V

Drain to Source Voltage (Vdss) :

200V

Weight :

1.437803g

Number of Channels :

1

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

Drain to Source Resistance :

800mOhm

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

200V

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Mount :

Surface Mount

Input Capacitance :

260pF

Mounting Type :

Surface Mount

Resistance :

800mOhm

Width :

9.65mm

Turn-Off Delay Time :

19 ns

Rds On Max :

800 mΩ

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Power Dissipation :

3W

Number of Pins :

3

Packaging :

Tube