IRF620PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-220AB

Rise Time :

22ns

Max Operating Temperature :

150°C

Factory Lead Time :

8 Weeks

Number of Pins :

3

Radiation Hardening :

No

Drain to Source Resistance :

800mOhm

Packaging :

Tube

Fall Time (Typ) :

13 ns

Height :

9.01mm

Threshold Voltage :

2V

Mount :

Through Hole

Power Dissipation :

50W

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

14nC @ 10V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage :

200V

REACH SVHC :

Unknown

Recovery Time :

300 ns

Current - Continuous Drain (Id) @ 25°C :

5.2A Tc

Lead Free :

Lead Free

Current Rating :

5.2A

Current :

52A

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

7.2 ns

Drain to Source Voltage (Vdss) :

200V

Drain to Source Breakdown Voltage :

200V

Min Operating Temperature :

-55°C

Number of Channels :

1

Resistance :

800mOhm

RoHS Status :

ROHS3 Compliant

Length :

10.41mm

Voltage - Rated DC :

250V

Nominal Vgs :

2 V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

5.2A

Number of Elements :

1

Element Configuration :

Single

Rds On (Max) @ Id, Vgs :

800mOhm @ 3.1A, 10V

Published :

2004

Input Capacitance :

260pF

Power Dissipation-Max :

50W Tc

Turn-Off Delay Time :

19 ns

Width :

4.7mm

Input Capacitance (Ciss) (Max) @ Vds :

260pF @ 25V

Rds On Max :

800 mΩ

Vgs (Max) :

±20V

Weight :

6.000006g