IRF6201TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

320 ns

Continuous Drain Current (ID) :

27A

Number of Terminations :

8

Transistor Application :

SWITCHING

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

8555pF @ 16V

Drain-source On Resistance-Max :

0.00245Ohm

Gate to Source Voltage (Vgs) :

12V

Terminal Form :

Gull wing

Fall Time (Typ) :

265 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Factory Lead Time :

15 Weeks

Number of Pins :

8

Operating Temperature :

-55°C~150°C TJ

Series :

HEXFET®

Turn On Delay Time :

29 ns

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

1.1V @ 100μA

Length :

4.9784mm

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Element Configuration :

Single

Power Dissipation :

2.5W

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 4.5V

Vgs (Max) :

±12V

Mount :

Surface Mount

Height :

1.4986mm

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Power Dissipation-Max :

2.5W Ta

Drain to Source Breakdown Voltage :

20V

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Width :

3.9878mm

Radiation Hardening :

No

Rise Time :

100ns

Operating Mode :

ENHANCEMENT MODE

Published :

2009

Rds On (Max) @ Id, Vgs :

2.45m Ω @ 27A, 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

1

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)