IRF6201PBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Recovery Time :

120 ns

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

27A

Vgs (Max) :

±12V

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Published :

2004

Contact Plating :

Tin

Drain to Source Breakdown Voltage :

20V

Height :

1.4986mm

Power Dissipation-Max :

2.5W Ta

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

29 ns

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

8555pF @ 16V

Series :

HEXFET®

Turn-Off Delay Time :

320 ns

Current - Continuous Drain (Id) @ 25°C :

27A Ta

Number of Elements :

1

Drain-source On Resistance-Max :

0.00245Ohm

Threshold Voltage :

1.1V

Transistor Element Material :

SILICON

Power Dissipation :

2.5W

Gate Charge (Qg) (Max) @ Vgs :

195nC @ 4.5V

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Length :

4.9784mm

Rds On (Max) @ Id, Vgs :

2.45m Ω @ 27A, 4.5V

Vgs(th) (Max) @ Id :

1.1V @ 100μA

REACH SVHC :

No SVHC

Fall Time (Typ) :

265 ns

Terminal Form :

Gull wing

Rise Time :

100ns

Terminal Position :

Dual

Mount :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

3.9878mm

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

ECCN Code :

EAR99

Number of Pins :

8

Packaging :

Tube

Radiation Hardening :

No

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V