IRF614STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Case Connection :

DRAIN

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Number of Terminations :

2

Number of Pins :

3

Power Dissipation-Max :

3.1W Ta 36W Tc

Gate to Source Voltage (Vgs) :

20V

Resistance :

2Ohm

Fall Time (Typ) :

7 ns

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.6A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pin Count :

4

RoHS Status :

ROHS3 Compliant

Drain to Source Voltage (Vdss) :

250V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Channels :

1

Rise Time :

7.6ns

Packaging :

Tape and Reel (TR)

Published :

2016

FET Type :

N-Channel

Number of Elements :

1

Width :

9.65mm

Height :

4.83mm

Length :

10.67mm

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

7 ns

DS Breakdown Voltage-Min :

250V

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

MATTE TIN

Factory Lead Time :

8 Weeks

Pulsed Drain Current-Max (IDM) :

8A

Time@Peak Reflow Temperature-Max (s) :

40

Weight :

1.437803g

Continuous Drain Current (ID) :

2.7A

Additional Feature :

AVALANCHE RATED

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Turn-Off Delay Time :

16 ns

Radiation Hardening :

No

JESD-609 Code :

e3

Vgs(th) (Max) @ Id :

4V @ 250µA