IRF614STRL

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

2.7A

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Power Dissipation-Max :

3.1W Ta 36W Tc

Drain-source On Resistance-Max :

2Ohm

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

8.2nC @ 10V

Mounting Type :

Surface Mount

Terminal Finish :

TIN LEAD

Rds On (Max) @ Id, Vgs :

2 Ω @ 1.6A, 10V

Peak Reflow Temperature (Cel) :

240

Input Capacitance (Ciss) (Max) @ Vds :

140pF @ 25V

Terminal Position :

Single

JESD-609 Code :

e0

Terminal Form :

Gull wing

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

250V

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

Non-RoHS Compliant

Pbfree Code :

No

Packaging :

Tape and Reel (TR)

Drive Voltage (Max Rds On,Min Rds On) :

10V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

2.7A Tc

Case Connection :

DRAIN

FET Type :

N-Channel

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

8A

Operating Mode :

ENHANCEMENT MODE

Pin Count :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

DS Breakdown Voltage-Min :

250V

Time@Peak Reflow Temperature-Max (s) :

30

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

61 mJ