IRF612

Manufacturer :

Harris Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package :

Bulk

Rds On (Max) @ Id, Vgs :

2.4Ohm @ 1.6A, 10V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Supplier Device Package :

TO-220AB

Product Status :

Active

Mounting Type :

Through Hole

Series :

-

FET Feature :

-

Gate Charge (Qg) (Max) @ Vgs :

8.2 nC @ 10 V

Power Dissipation (Max) :

43W (Tc)

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

2.6A (Tc)

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

135 pF @ 25 V

Drain to Source Voltage (Vdss) :

200 V