IRF610STRRPBF
- Mfr.Part #
- IRF610STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.3A D2PAK
- Stock
- 16,617
- In Stock :
- 16,617
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Height :
- 4.83mm
- Rise Time :
- 17ns
- Power Dissipation-Max :
- 3W Ta 36W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Turn-Off Delay Time :
- 14 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Supplier Device Package :
- D2PAK
- Number of Pins :
- 3
- Min Operating Temperature :
- -55°C
- Width :
- 9.65mm
- Continuous Drain Current (ID) :
- 3.3A
- Fall Time (Typ) :
- 8.9 ns
- Number of Channels :
- 1
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2A, 10V
- Published :
- 2013
- Operating Temperature :
- -55°C~150°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Weight :
- 1.437803g
- Element Configuration :
- Single
- Drain to Source Voltage (Vdss) :
- 200V
- Packaging :
- Tape and Reel (TR)
- Mount :
- Surface Mount
- Turn On Delay Time :
- 8.2 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- FET Type :
- N-Channel
- Max Operating Temperature :
- 150°C
- Drain to Source Resistance :
- 1.5Ohm
- Factory Lead Time :
- 11 Weeks
- Rds On Max :
- 1.5 Ω
- Input Capacitance :
- 140pF
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRF610STRRPBF
N-Channel Tape & Reel (TR) 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF610STRRPBF Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 140pF @ 25V.This device has a continuous drain current (ID) of [3.3A], which is its maximum continuous current.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 14 ns.MOSFETs have 1.5Ohm resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to operate this transistor, a voltage of 200V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).
IRF610STRRPBF Features
a continuous drain current (ID) of 3.3A
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF610STRRPBF Applications
There are a lot of Vishay Siliconix
IRF610STRRPBF applications of single MOSFETs transistors.
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
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