IRF610STRR
- Mfr.Part #
- IRF610STRR
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.3A D2PAK
- Stock
- 4,232
- In Stock :
- 4,232
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Breakdown Voltage :
- 200V
- FET Type :
- N-Channel
- Supplier Device Package :
- D2PAK
- Rise Time :
- 17ns
- Mount :
- Surface Mount
- Drain to Source Resistance :
- 1.5Ohm
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Power Dissipation-Max :
- 3W Ta 36W Tc
- Published :
- 2016
- RoHS Status :
- Non-RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Rds On Max :
- 1.5 Ω
- Turn-Off Delay Time :
- 14 ns
- Height :
- 4.83mm
- Number of Channels :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Turn On Delay Time :
- 8.2 ns
- Fall Time (Typ) :
- 8.9 ns
- Min Operating Temperature :
- -55°C
- Input Capacitance :
- 140pF
- Continuous Drain Current (ID) :
- 3.3A
- Element Configuration :
- Single
- Mounting Type :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Length :
- 10.67mm
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 200V
- Max Operating Temperature :
- 150°C
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2A, 10V
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Width :
- 9.65mm
- Weight :
- 1.437803g
- Datasheets
- IRF610STRR
N-Channel Tape & Reel (TR) 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF610STRR Overview
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF610STRR Features
a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF610STRR Applications
There are a lot of Vishay Siliconix
IRF610STRR applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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