IRF610STRR

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Mfr.Part #
IRF610STRR
Manufacturer
Vishay
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 200V 3.3A D2PAK
Stock
4,232
In Stock :
4,232

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
200V
FET Type :
N-Channel
Supplier Device Package :
D2PAK
Rise Time :
17ns
Mount :
Surface Mount
Drain to Source Resistance :
1.5Ohm
Current - Continuous Drain (Id) @ 25°C :
3.3A Tc
Power Dissipation-Max :
3W Ta 36W Tc
Published :
2016
RoHS Status :
Non-RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds :
140pF @ 25V
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On Max :
1.5 Ω
Turn-Off Delay Time :
14 ns
Height :
4.83mm
Number of Channels :
1
Gate Charge (Qg) (Max) @ Vgs :
8.2nC @ 10V
Turn On Delay Time :
8.2 ns
Fall Time (Typ) :
8.9 ns
Min Operating Temperature :
-55°C
Input Capacitance :
140pF
Continuous Drain Current (ID) :
3.3A
Element Configuration :
Single
Mounting Type :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 250µA
Packaging :
Tape and Reel (TR)
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Length :
10.67mm
Vgs (Max) :
±20V
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
200V
Max Operating Temperature :
150°C
Rds On (Max) @ Id, Vgs :
1.5Ohm @ 2A, 10V
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Width :
9.65mm
Weight :
1.437803g
Datasheets
IRF610STRR
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF610STRR from Chip IC,where excellence meets affordability. This product stands out with its Number of Channels:1, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF610STRR pinout, IRF610STRR datasheet PDF, IRF610STRR amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF610STRR ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF610STRR


N-Channel Tape & Reel (TR) 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF610STRR Overview


A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 200V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

IRF610STRR Features


a continuous drain current (ID) of 3.3A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)


IRF610STRR Applications


There are a lot of Vishay Siliconix
IRF610STRR applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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