IRF610STRLPBF
- Mfr.Part #
- IRF610STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 3.3A D2PAK
- Stock
- 1,941
- In Stock :
- 1,941
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Length :
- 10.67mm
- Min Operating Temperature :
- -55°C
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 17ns
- Published :
- 2013
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Gate Charge (Qg) (Max) @ Vgs :
- 8.2nC @ 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.3A Tc
- Power Dissipation-Max :
- 3W Ta 36W Tc
- Mount :
- Surface Mount
- Width :
- 9.65mm
- Number of Pins :
- 3
- Weight :
- 1.437803g
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Power Dissipation :
- 3W
- Fall Time (Typ) :
- 8.9 ns
- Rds On Max :
- 1.5 Ω
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 1.5Ohm @ 2A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Number of Channels :
- 1
- Drain to Source Resistance :
- 1.5Ohm
- Turn-Off Delay Time :
- 14 ns
- Input Capacitance :
- 140pF
- Element Configuration :
- Single
- Turn On Delay Time :
- 8.2 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Number of Elements :
- 1
- Continuous Drain Current (ID) :
- 3.3A
- Supplier Device Package :
- D2PAK
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Voltage (Vdss) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 140pF @ 25V
- Mounting Type :
- Surface Mount
- Height :
- 4.83mm
- FET Type :
- N-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Datasheets
- IRF610STRLPBF
N-Channel Tape & Reel (TR) 1.5Ohm @ 2A, 10V ±20V 140pF @ 25V 8.2nC @ 10V 200V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF610STRLPBF Overview
A device's maximal input capacitance is 140pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 3.3A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 14 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 1.5Ohm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.2 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This transistor requires a 200V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IRF610STRLPBF Features
a continuous drain current (ID) of 3.3A
the turn-off delay time is 14 ns
single MOSFETs transistor is 1.5Ohm
a 200V drain to source voltage (Vdss)
IRF610STRLPBF Applications
There are a lot of Vishay Siliconix
IRF610STRLPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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