IRF2907ZSTRLPBF

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Mfr.Part #
IRF2907ZSTRLPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 75V 160A D2PAK
Stock
3,224
In Stock :
3,224

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Pulsed Drain Current-Max (IDM) :
680A
ECCN Code :
EAR99
Input Capacitance (Ciss) (Max) @ Vds :
7500pF @ 25V
Published :
2004
Resistance :
4.5mOhm
Transistor Application :
SWITCHING
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Lead Free :
Lead Free
Power Dissipation-Max :
300W Tc
Width :
9.65mm
Element Configuration :
Single
Turn-Off Delay Time :
97 ns
Terminal Form :
Gull wing
REACH SVHC :
No SVHC
Threshold Voltage :
4V
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Length :
10.668mm
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~175°C TJ
Mount :
Surface Mount
Height :
4.826mm
JESD-30 Code :
R-PSSO-G2
Turn On Delay Time :
19 ns
Rds On (Max) @ Id, Vgs :
4.5m Ω @ 75A, 10V
Series :
HEXFET®
Drain to Source Breakdown Voltage :
75V
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
30
Number of Pins :
3
Power Dissipation :
300W
Peak Reflow Temperature (Cel) :
260
JESD-609 Code :
e3
RoHS Status :
ROHS3 Compliant
Rise Time :
140ns
Factory Lead Time :
12 Weeks
Radiation Hardening :
No
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Drive Voltage (Max Rds On,Min Rds On) :
10V
Vgs (Max) :
±20V
Number of Terminations :
2
Mounting Type :
Surface Mount
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time (Typ) :
100 ns
Avalanche Energy Rating (Eas) :
690 mJ
Case Connection :
DRAIN
Number of Elements :
1
Packaging :
Tape and Reel (TR)
Continuous Drain Current (ID) :
75A
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Operating Mode :
ENHANCEMENT MODE
Datasheets
IRF2907ZSTRLPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2907ZSTRLPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Number of Terminations:2, Mounting Type:Surface Mount, Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, IRF2907ZSTRLPBF pinout, IRF2907ZSTRLPBF datasheet PDF, IRF2907ZSTRLPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2907ZSTRLPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF2907ZSTRLPBF


N-Channel Tape & Reel (TR) 4.5m Ω @ 75A, 10V ±20V 7500pF @ 25V 270nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF2907ZSTRLPBF Overview


There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 690 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 7500pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 75A amps.In this device, the drain-source breakdown voltage is 75V and VGS=75V, so the drain-source breakdown voltage is 75V in this case.It is [97 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.As far as peak drain current is concerned, its maximum pulsed current is 680A.A turn-on delay time of 19 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 4V.A device like this reduces its overall power consumption when it uses drive voltage (10V).

IRF2907ZSTRLPBF Features


the avalanche energy rating (Eas) is 690 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 75V voltage
the turn-off delay time is 97 ns
based on its rated peak drain current 680A.
a threshold voltage of 4V


IRF2907ZSTRLPBF Applications


There are a lot of Infineon Technologies
IRF2907ZSTRLPBF applications of single MOSFETs transistors.


  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
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