IRF200B211
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- Mfr.Part #
- IRF200B211
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 12A TO220AB
- Stock
- 18,373
- In Stock ：
- 18,373
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Drain to Source Voltage (Vdss) :
- 200V
- ECCN Code :
- EAR99
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Series :
- HEXFET®, StrongIRFET™
- Package / Case :
- TO-220-3
- Power Dissipation-Max :
- 80W Tc
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 23nC @ 10V
- Published :
- 2013
- FET Type :
- N-Channel
- Continuous Drain Current (ID) :
- 12A
- Input Capacitance (Ciss) (Max) @ Vds :
- 790pF @ 50V
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4.9V @ 50μA
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Packaging :
- Tube
- Vgs (Max) :
- ±20V
- Rds On (Max) @ Id, Vgs :
- 170m Ω @ 7.2A, 10V
- Operating Temperature :
- -55°C~175°C TJ
- Mounting Type :
- Through Hole
- Resistance :
- 170mOhm
- Datasheets
- IRF200B211
N-Channel Tube 170m Ω @ 7.2A, 10V ±20V 790pF @ 50V 23nC @ 10V 200V TO-220-3
IRF200B211 Description
IRF200B211 is a 200V Single N-Channel IR MOSFET? Power MOSFET in a TO-220 package. The IR MOSFET? family of power MOSFET utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery-powered applications. The optimized gate drive options enable designers the flexibility of selecting super, logic, or normal level drives.
IRF200B211 Features
-
Optimized for broadest availability from distribution partners
-
Product qualification according to JEDEC standard
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Industry-standard through-hole power package
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High-current carrying capability package
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Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
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Fully Characterized Capacitance and Avalanche SOA
-
Enhanced body diode dV/dt and dI/dt Capability
IRF200B211 Applications
-
SMPS
-
UPS
-
Solar power inverter
-
DC motor drives
-
Battery-powered applications
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