IRF200P223

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5094pF @ 50V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

No

Package / Case :

TO-247-3

Current - Continuous Drain (Id) @ 25°C :

100A Tc

Published :

2013

FET Type :

N-Channel

DS Breakdown Voltage-Min :

200V

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

11.5m Ω @ 60A, 10V

Terminal Position :

Single

Series :

StrongIRFET™

Case Connection :

DRAIN

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

102nC @ 10V

Packaging :

Tube

Transistor Element Material :

SILICON

Factory Lead Time :

26 Weeks

Power Dissipation-Max :

313W Tc

Number of Elements :

1

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247AC

Number of Terminations :

3

Drain to Source Voltage (Vdss) :

200V

Vgs(th) (Max) @ Id :

4V @ 270μA

ECCN Code :

EAR99

Drain-source On Resistance-Max :

0.0115Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

541 mJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

100A

Pulsed Drain Current-Max (IDM) :

400A

Vgs (Max) :

±20V