IRF2204LPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

Packaging :

Tube

Input Capacitance :

5.89nF

FET Type :

N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2010

Mounting Type :

Through Hole

Power Dissipation :

200W

Number of Elements :

1

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

200W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Min Operating Temperature :

-55°C

Continuous Drain Current (ID) :

170A

Number of Pins :

3

Current Rating :

170A

Voltage - Rated DC :

40V

Rds On (Max) @ Id, Vgs :

3.6mOhm @ 130A, 10V

Series :

HEXFET®

Mount :

Through Hole

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

40V

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Max Operating Temperature :

175°C

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Rise Time :

140ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Supplier Device Package :

TO-262

RoHS Status :

RoHS Compliant

Rds On Max :

3.6 mΩ