IRF200P222

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Through Hole

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

6.6m Ω @ 82A, 10V

Factory Lead Time :

26 Weeks

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain-source On Resistance-Max :

0.0066Ohm

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

182A

Operating Mode :

ENHANCEMENT MODE

Max Junction Temperature (Tj) :

175°C

Drain to Source Breakdown Voltage :

200V

Power Dissipation-Max :

556W Tc

Height :

24.99mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

182A Tc

Case Connection :

DRAIN

Published :

2013

Power Dissipation :

556W

Vgs(th) (Max) @ Id :

4V @ 270μA

Number of Elements :

1

FET Type :

N-Channel

Surface Mount :

No

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

25 ns

Input Capacitance (Ciss) (Max) @ Vds :

9820pF @ 50V

Transistor Application :

SWITCHING

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-247-3

Transistor Element Material :

SILICON

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

728A

Series :

StrongIRFET™

Packaging :

Tube

Number of Channels :

1

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Terminal Position :

Single

Turn-Off Delay Time :

77 ns

JESD-30 Code :

R-PSFM-T3

JEDEC-95 Code :

TO-247AC

Gate Charge (Qg) (Max) @ Vgs :

203nC @ 10V