IRF2204SPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Element Configuration :

Single

Factory Lead Time :

14 Weeks

Mount :

Surface Mount

Threshold Voltage :

4V

Height :

4.572mm

Pulsed Drain Current-Max (IDM) :

850A

Transistor Application :

SWITCHING

Current Rating :

170A

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

3.6m Ω @ 130A, 10V

REACH SVHC :

No SVHC

Transistor Element Material :

SILICON

Dual Supply Voltage :

40V

Fall Time (Typ) :

110 ns

Continuous Drain Current (ID) :

170A

Avalanche Energy Rating (Eas) :

460 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Number of Terminations :

2

Series :

HEXFET®

Turn On Delay Time :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Number of Pins :

3

Rise Time :

140ns

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Operating Mode :

ENHANCEMENT MODE

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

5890pF @ 25V

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

200W Tc

Radiation Hardening :

No

Packaging :

Tube

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Width :

9.65mm

Length :

10.668mm

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

170A Tc

Published :

2002

Number of Elements :

1

Peak Reflow Temperature (Cel) :

260

Resistance :

3.6mOhm

Vgs (Max) :

±20V

Voltage - Rated DC :

40V

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

40V

Power Dissipation :

200W

Drain Current-Max (Abs) (ID) :

75A

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Turn-Off Delay Time :

62 ns

Lead Free :

Lead Free