IRF2907ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

690 mJ

Width :

4.826mm

Element Configuration :

Single

Package / Case :

TO-220-3

Power Dissipation :

330W

Dual Supply Voltage :

75V

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Length :

10.668mm

Lead Free :

Lead Free

Case Connection :

DRAIN

Power Dissipation-Max :

300W Tc

Mount :

Through Hole

Packaging :

Tube

FET Type :

N-Channel

REACH SVHC :

No SVHC

Number of Pins :

3

Fall Time (Typ) :

100 ns

Voltage - Rated DC :

75V

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

75V

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

RoHS Status :

ROHS3 Compliant

Nominal Vgs :

4 V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

ECCN Code :

EAR99

Height :

9.017mm

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Continuous Drain Current (ID) :

75A

Operating Mode :

ENHANCEMENT MODE

Resistance :

4.5mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Turn On Delay Time :

19 ns

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Threshold Voltage :

4V

Operating Temperature :

-55°C~175°C TJ

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Published :

2010

Pulsed Drain Current-Max (IDM) :

680A

Factory Lead Time :

12 Weeks

Turn-Off Delay Time :

97 ns

Rise Time :

140ns

Current Rating :

75A

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Radiation Hardening :

No

Number of Terminations :

3