IRF2907ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

300W Tc

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

4.5m Ω @ 75A, 10V

Power Dissipation :

300W

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

170A

ECCN Code :

EAR99

Mount :

Through Hole

Nominal Vgs :

4 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Termination :

Through Hole

Turn On Delay Time :

19 ns

Height :

9.652mm

Drain to Source Breakdown Voltage :

75V

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Width :

4.826mm

Packaging :

Tube

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Number of Pins :

3

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

7500pF @ 25V

Element Configuration :

Single

RoHS Status :

RoHS Compliant

Fall Time (Typ) :

100 ns

Turn-Off Delay Time :

97 ns

Published :

2003

Length :

10.668mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

270nC @ 10V

Dual Supply Voltage :

75V

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Mounting Type :

Through Hole

Rise Time :

140ns