IRF2903ZSTRRP

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

1020A

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Operating Temperature :

-55°C~175°C TJ

Drain Current-Max (Abs) (ID) :

75A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Drain to Source Voltage (Vdss) :

30V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Mode :

ENHANCEMENT MODE

Published :

2010

JESD-30 Code :

R-PSSO-G2

DS Breakdown Voltage-Min :

30V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Number of Elements :

1

Power Dissipation-Max :

290W Tc

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Reach Compliance Code :

Compliant

Avalanche Energy Rating (Eas) :

820 mJ

Terminal Finish :

MATTE TIN OVER NICKEL

FET Type :

N-Channel

Surface Mount :

yes

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 150μA

Drain-source On Resistance-Max :

0.0024Ohm

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Peak Reflow Temperature (Cel) :

260

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Terminal Position :

Single

RoHS Status :

RoHS Compliant

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Number of Terminations :

2

Time@Peak Reflow Temperature-Max (s) :

30

Case Connection :

DRAIN

Qualification Status :

Not Qualified