IRF2903ZSTRLP

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Mfr.Part #
IRF2903ZSTRLP
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 75A D2PAK
Stock
141,497
In Stock :
141,497

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Surface Mount
Vgs(th) (Max) @ Id :
4V @ 150μA
Fall Time (Typ) :
37 ns
Element Configuration :
Single
Turn-Off Delay Time :
48 ns
Transistor Element Material :
SILICON
Drive Voltage (Max Rds On,Min Rds On) :
10V
Pulsed Drain Current-Max (IDM) :
1020A
Published :
2005
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Series :
HEXFET®
Factory Lead Time :
16 Weeks
Time@Peak Reflow Temperature-Max (s) :
30
Avalanche Energy Rating (Eas) :
820 mJ
Turn On Delay Time :
24 ns
Input Capacitance (Ciss) (Max) @ Vds :
6320pF @ 25V
Power Dissipation :
290W
Continuous Drain Current (ID) :
75A
Peak Reflow Temperature (Cel) :
260
Lead Free :
Lead Free
Resistance :
2.4MOhm
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Number of Elements :
1
Power Dissipation-Max :
290W Tc
Operating Mode :
ENHANCEMENT MODE
Case Connection :
DRAIN
FET Type :
N-Channel
Radiation Hardening :
No
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 75A, 10V
Mounting Type :
Surface Mount
Number of Terminations :
2
Transistor Application :
SWITCHING
ECCN Code :
EAR99
Rise Time :
100ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Packaging :
Tape and Reel (TR)
JESD-30 Code :
R-PSSO-G2
Drain to Source Breakdown Voltage :
30V
Number of Pins :
3
Vgs (Max) :
±20V
JESD-609 Code :
e3
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Terminal Form :
Gull wing
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Gate to Source Voltage (Vgs) :
20V
Operating Temperature :
-55°C~175°C TJ
RoHS Status :
ROHS3 Compliant
Datasheets
IRF2903ZSTRLP
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSTRLP from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IRF2903ZSTRLP pinout, IRF2903ZSTRLP datasheet PDF, IRF2903ZSTRLP amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSTRLP ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF2903ZSTRLP


N-Channel Tape & Reel (TR) 2.4m Ω @ 75A, 10V ±20V 6320pF @ 25V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF2903ZSTRLP Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 820 mJ.A device's maximum input capacitance is 6320pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 75A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=30V, and this device has a drain-to-source breakdown voltage of 30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 48 ns.Its maximum pulsed drain current is 1020A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 24 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IRF2903ZSTRLP Features


the avalanche energy rating (Eas) is 820 mJ
a continuous drain current (ID) of 75A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
based on its rated peak drain current 1020A.


IRF2903ZSTRLP Applications


There are a lot of Infineon Technologies
IRF2903ZSTRLP applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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