IRF2903ZSPBF

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Mfr.Part #
IRF2903ZSPBF
Manufacturer
Infineon Technologies
Package / Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Datasheet
Download
Description
MOSFET N-CH 30V 75A D2PAK
Stock
10,045
In Stock :
10,045

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Package / Case :
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Fall Time (Typ) :
37 ns
JESD-30 Code :
R-PSSO-G2
Turn-Off Delay Time :
48 ns
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Gate Charge (Qg) (Max) @ Vgs :
240nC @ 10V
Height :
4.83mm
Power Dissipation :
231W
Additional Feature :
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Gate to Source Voltage (Vgs) :
20V
Drain to Source Breakdown Voltage :
30V
Current - Continuous Drain (Id) @ 25°C :
75A Tc
Rds On (Max) @ Id, Vgs :
2.4m Ω @ 75A, 10V
Series :
HEXFET®
Transistor Application :
SWITCHING
Case Connection :
DRAIN
RoHS Status :
ROHS3 Compliant
Power Dissipation-Max :
231W Tc
Width :
9.65mm
Operating Mode :
ENHANCEMENT MODE
REACH SVHC :
No SVHC
Element Configuration :
Single
Rise Time :
100ns
Input Capacitance (Ciss) (Max) @ Vds :
6320pF @ 25V
Peak Reflow Temperature (Cel) :
260
Number of Elements :
1
Drive Voltage (Max Rds On,Min Rds On) :
10V
Number of Terminations :
2
Vgs(th) (Max) @ Id :
4V @ 150μA
Threshold Voltage :
4V
Packaging :
Tube
Continuous Drain Current (ID) :
260A
Avalanche Energy Rating (Eas) :
820 mJ
Lead Free :
Lead Free
Operating Temperature :
-55°C~175°C TJ
Nominal Vgs :
4 V
Vgs (Max) :
±20V
JESD-609 Code :
e3
Terminal Form :
Gull wing
Number of Pins :
3
ECCN Code :
EAR99
Recovery Time :
51 ns
Mount :
Surface Mount
Turn On Delay Time :
24 ns
Drain-source On Resistance-Max :
0.0024Ohm
Transistor Element Material :
SILICON
FET Type :
N-Channel
Time@Peak Reflow Temperature-Max (s) :
30
Published :
2005
Length :
10.67mm
Drain Current-Max (Abs) (ID) :
75A
Radiation Hardening :
No
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Mounting Type :
Surface Mount
Datasheets
IRF2903ZSPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSPBF from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB, Number of Terminations:2, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, Mounting Type:Surface Mount, IRF2903ZSPBF pinout, IRF2903ZSPBF datasheet PDF, IRF2903ZSPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF2903ZSPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF2903ZSPBF


N-Channel Tube 2.4m Ω @ 75A, 10V ±20V 6320pF @ 25V 240nC @ 10V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRF2903ZSPBF Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 820 mJ.A device's maximal input capacitance is 6320pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 260A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.In this device, the drain current is 75A, which is the maximum continuous current the device can conduct.Its turn-off delay time is 48 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 24 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a 4V threshold voltage.This device reduces its overall power consumption by using drive voltage (10V).

IRF2903ZSPBF Features


the avalanche energy rating (Eas) is 820 mJ
a continuous drain current (ID) of 260A
a drain-to-source breakdown voltage of 30V voltage
the turn-off delay time is 48 ns
a threshold voltage of 4V


IRF2903ZSPBF Applications


There are a lot of Infineon Technologies
IRF2903ZSPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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