IRF2903ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Threshold Voltage :

4V

Drain-source On Resistance-Max :

0.0024Ohm

Gate to Source Voltage (Vgs) :

20V

Number of Terminations :

3

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Nominal Vgs :

4 V

Published :

2005

Factory Lead Time :

12 Weeks

Recovery Time :

51 ns

Vgs(th) (Max) @ Id :

4V @ 150μA

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rds On (Max) @ Id, Vgs :

2.4m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Power Dissipation-Max :

290W Tc

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

260A

Drain to Source Breakdown Voltage :

30V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

75A

Turn On Delay Time :

24 ns

Number of Pins :

3

ECCN Code :

EAR99

JEDEC-95 Code :

TO-220AB

FET Type :

N-Channel

Transistor Application :

SWITCHING

Height :

9.02mm

Number of Elements :

1

Avalanche Energy Rating (Eas) :

820 mJ

Length :

10.67mm

Power Dissipation :

290W

Fall Time (Typ) :

37 ns

Width :

4.83mm

Vgs (Max) :

±20V

Operating Temperature :

-55°C~175°C TJ

Series :

HEXFET®

Mount :

Through Hole

Turn-Off Delay Time :

48 ns

Element Configuration :

Single

Packaging :

Tube

Rise Time :

100ns