IRF2903ZLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

REACH SVHC :

No SVHC

Number of Pins :

3

Rise Time :

140ns

Radiation Hardening :

No

Vgs (Max) :

±20V

Max Operating Temperature :

175°C

Power Dissipation :

231W

Packaging :

Tube

Published :

2010

Mount :

Through Hole

RoHS Status :

RoHS Compliant

Length :

10.668mm

Supplier Device Package :

TO-262

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Drain to Source Resistance :

2.4MOhm

Width :

4.826mm

Drain to Source Voltage (Vdss) :

30V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Drain to Source Breakdown Voltage :

30V

Rds On Max :

2.4 mΩ

Height :

9.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

2.4mOhm @ 75A, 10V

Turn-Off Delay Time :

48 ns

Gate Charge (Qg) (Max) @ Vgs :

240nC @ 10V

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 150μA

Power Dissipation-Max :

231W Tc

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Operating Temperature :

-55°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

6320pF @ 25V

Mounting Type :

Through Hole

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Nominal Vgs :

4 V

Input Capacitance :

6.32nF

Continuous Drain Current (ID) :

75A

Turn On Delay Time :

19 ns

Fall Time (Typ) :

100 ns